The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2024
Filed:
Dec. 28, 2020
China Resources Microelectronics (Chongqing) Co., Ltd., Chongqing, CN;
CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO., LTD., Chongqing, CN;
Abstract
A semiconductor device comprises a drift region (), a body region (), a first doped region () and a second doped region ()); a first trench penetrates the first doped region (), the body region () extends into the drift region (); an extension region () having an opposite conductivity type to the drift region () and surrounding the bottom wall of the first trench; where the first trench is filled with a first conductive structure () and a second conductive structure (); a dielectric layer () formed between the second conductive structure () and the inner wall of the first trench, as well as between the first conductive structure () and the inner wall of the first trench; a second trench penetrating the first doped region () and the body region (), and a dielectric layer () located between the third conductive structure () and the second trench ().