The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2024

Filed:

Jul. 29, 2019
Applicant:

Silios Technologies, Rousset, FR;

Inventors:

Stephane Tisserand, Aubagne, FR;

Laurent Roux, Marseilles, FR;

Marc Hubert, Fuveau, FR;

Vincent Sauget, Aix en Provence, FR;

Assignee:

SILIOS TECHNOLOGIES, Rousset, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 25/75 (2023.01); H04N 25/60 (2023.01); H04N 23/11 (2023.01);
U.S. Cl.
CPC ...
H01L 27/1464 (2013.01); H01L 27/1465 (2013.01); H01L 27/14634 (2013.01); H04N 23/11 (2023.01); H04N 25/60 (2023.01); H04N 25/75 (2023.01);
Abstract

A hybrid multispectral imaging sensor, characterized in that it comprises a photosensitive backside-illumination detector (DET) that is made on a substrate () made of InP, and that is formed of a matrix of pixels (, P, P, P) that are themselves made in a structure based on InGaAs (), and a filter module (MF) that is formed of a matrix of elementary filters (λ) reproducing said matrix of pixels, and that is mounted into contact with said substrate (), said substrate () made of InP having a thickness less than 50 μm, and preferably less than 30 μm.


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