The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2024

Filed:

Mar. 06, 2023
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Inventors:

Seiichi Yoneda, Isehara, JP;

Hidetomo Kobayashi, Kanagawa, JP;

Takashi Nakagawa, Kangawa, JP;

Yusuke Negoro, Kanagawa, JP;

Shunpei Yamazaki, Tokyo, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H04N 25/79 (2023.01); H04N 25/532 (2023.01); H04N 25/78 (2023.01); H01L 27/146 (2006.01); H04N 25/75 (2023.01); H04N 25/531 (2023.01); H04N 25/771 (2023.01);
U.S. Cl.
CPC ...
H01L 27/14612 (2013.01); H04N 25/531 (2023.01); H04N 25/532 (2023.01); H04N 25/75 (2023.01); H04N 25/771 (2023.01); H04N 25/78 (2023.01); H04N 25/79 (2023.01);
Abstract

An imaging device that can obtain imaging data corresponding to high-resolution images in a short period of time is provided. The imaging device includes a pixel including a photoelectric conversion element and n (n is an integer more than 2 inclusive) retention circuits. The photoelectric conversion element and the n retention circuits are stacked. One electrode of the photoelectric conversion element is electrically connected to the first to n-th retention circuits. The retention circuits include OS transistors with an extremely low off-state current feature, and can retain imaging data for a long time. In the first to n-th periods, the imaging device obtains the first to n-th imaging data and retains it in the first to n-th retention circuits. Then, the first to n-th imaging data retained in the first to n-th retention circuits are read out. The read imaging data is output outside the imaging data through AD conversion.


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