The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2024
Filed:
May. 13, 2021
Omnivision Technologies, Inc., Santa Clara, CA (US);
Seong Yeol Mun, Santa Clara, CA (US);
Heesoo Kang, Cupertino, CA (US);
Xiang Zhang, Sunnyvale, CA (US);
OmniVision Technologies, Inc., Santa Clara, CA (US);
Abstract
A shallow trench isolation (STI) structure and method of fabrication includes forming a shallow trench isolation (STI) structure having a polygonal shaped cross-section in a semiconductor substrate of an image sensor includes a two-step etching process. The first step is a dry plasma etch that forms a portion of the trench to a first depth. The second step is a wet etch process that completes the trench etching to the desired depth and cures damage caused by the dry etch process. A CMOS image sensor includes a semiconductor substrate having a photodiode region and a pixel transistor region separated by a shallow trench isolation (STI) structure having a polygonal shaped cross-section.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile