The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2024

Filed:

Aug. 13, 2021
Applicant:

Mitsubishi Chemical Corporation, Tokyo, JP;

Inventors:

Tomohiro Kyotani, Tokyo, JP;

Eiji Dejima, Tokyo, JP;

Naoko Sumitani, Tokyo, JP;

Tomohiro Kato, Tokyo, JP;

Takeshi Sawai, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09G 1/02 (2006.01); H01L 21/304 (2006.01); H01L 21/306 (2006.01); B24B 37/04 (2012.01); C01B 33/14 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30625 (2013.01); B24B 37/042 (2013.01); C01B 33/14 (2013.01); C01P 2004/64 (2013.01);
Abstract

An object of the present invention is to provide a silica particle having excellent polishing characteristics and storage stability, a method for producing the silica particle, a silica sol containing the silica particles, and a polishing composition containing the silica sol. Another object of the present invention is to provide a polishing method, a method for producing a semiconductor wafer, and a method for producing a semiconductor device, which are excellent in productivity of an object to be polished. The silica particle in the present invention satisfies formula (1): y≥4.2 where a d value measured by wide-angle X-ray scattering is y Å.


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