The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2024
Filed:
Aug. 28, 2020
Applicant:
Imec Vzw, Leuven, BE;
Inventors:
Assignee:
IMEC VZW, Leuven, BE;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 29/775 (2006.01); H01L 21/822 (2006.01); H01L 29/10 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/02175 (2013.01); H01L 21/76834 (2013.01); H01L 21/8221 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823871 (2013.01); H01L 27/092 (2013.01); H01L 29/0653 (2013.01); H01L 29/1079 (2013.01); H01L 29/775 (2013.01);
Abstract
In a first aspect, the present disclosure relates to a method for forming a contact isolation for a semiconductor device, comprising: providing a semiconductor structure comprising a trench exposing a contact thereunder, filling a bottom of the trench with a sacrificial material, infiltrating the sacrificial material with a ceramic material, and removing the sacrificial material.
Quick Actions:
Chan, Boon. (2024). Contact isolation in semiconductor devices (U.S. Patent No. 11862452). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11862452
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile