The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2024

Filed:

Nov. 28, 2022
Applicant:

Contemporary Amperex Technology Co., Limited, Ningde, CN;

Inventors:

Yandong Wang, Ningde, CN;

Zhaohui Liu, Ningde, CN;

Shuojian Su, Ningde, CN;

Yongsheng Guo, Ningde, CN;

Guodong Chen, Ningde, CN;

Chuying Ouyang, Ningde, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 71/16 (2023.01); H01G 9/20 (2006.01); H01G 9/00 (2006.01); H10K 30/30 (2023.01); H10K 30/40 (2023.01); H10K 30/82 (2023.01); C23C 14/58 (2006.01); C23C 14/06 (2006.01); H10K 85/30 (2023.01);
U.S. Cl.
CPC ...
H01G 9/2009 (2013.01); C23C 14/06 (2013.01); C23C 14/0694 (2013.01); C23C 14/584 (2013.01); C23C 14/5846 (2013.01); H01G 9/0029 (2013.01); H01G 9/0036 (2013.01); H10K 30/30 (2023.02); H10K 30/40 (2023.02); H10K 30/82 (2023.02); H10K 71/164 (2023.02); H10K 85/30 (2023.02);
Abstract

The present application provides a method for preparing a perovskite film, and a related perovskite film, solar cell and solar cell device thereof. The preparation method may include the steps of (1) providing a target material comprising the following elements: lead, a halogen, and one or more alkali metals; (2) sputtering using the target material in step (1), where a process gas is a noble gas, optionally, argon, so as to obtain a film; (3) subjecting the film obtained in step (2) to a chemical bath treatment, wherein the chemical bath is a solution of AX, A is selected from one or more of formamidine or methylamine, and X is a halogen; and (4) sputtering on the film obtained in step (3) using a tin metal, where a process gas comprises a noble gas, optionally, a mixture of argon and a halogen gas, so as to obtain the perovskite film.


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