The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2024
Filed:
Aug. 30, 2022
China Flash Co., Ltd., Shanghai, CN;
CHINA FLASH CO., LTD. SHANGHAI, Shanghai, CN;
Abstract
An electronic device, and an over-erase detection and elimination method for memory cells are provided; the method includes: performing an erase operation on a specified area; selecting all the memory cells in the selected area one by one; measuring a threshold voltage of a selected memory cell for over-erase detection to see if it is less than a normal erase threshold voltage; if not, selecting the next memory cell for over-erase detection, and if yes, then performing a soft-write operation on the selected memory cell; after the soft-write operation, performing over-erase detection again to see whether the threshold voltage of the selected memory cell is within a normal threshold range; and if not, performing a soft-write operation again, and if yes, the next memory cell is selected for over-erase detection, until the threshold voltages of all the memory cells selected for erasure are within the normal threshold range.