The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2024

Filed:

Nov. 15, 2021
Applicant:

Semibrain Inc., Seongnam-si, KR;

Inventor:

Seung-Hwan Song, Palo Alto, CA (US);

Assignee:

SEMIBRAIN INC., Seongnam-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/40 (2006.01); G11C 11/4074 (2006.01); G11C 5/14 (2006.01); G11C 11/4096 (2006.01); G11C 11/4099 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4074 (2013.01); G11C 5/14 (2013.01); G11C 11/4096 (2013.01); G11C 11/4099 (2013.01);
Abstract

A driver circuit for operating a memory cell, adapted to be coupled to at least one memory cell through a respective output node, said driver circuit including: a first circuit for supplying the memory cell with a first read reference voltage through the output node; a second circuit for supplying the memory cell with a second read reference voltage through the output node; and a third circuit for controlling an operation of the second circuit, wherein a range of the second read reference voltage at the output node is wider than a range of the first read reference voltage at the output node during a read operation on the memory cell.


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