The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2024
Filed:
Jun. 09, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Minjun Lee, Seoul, KR;
Yongseok Kim, Suwon-si, KR;
Hyuncheol Kim, Seoul, KR;
Jongman Park, Hwaseong-si, KR;
Dongsoo Woo, Seoul, KR;
Kyunghwan Lee, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
Provided is a memory device. The memory device may include a substrate, a ferroelectric field effect transistor disposed on the substrate, a first channel contacting a gate structure of the ferroelectric field effect transistor and extending in a vertical direction from the gate structure of the ferroelectric field effect transistor, a selection word line disposed at one side of the first channel, a first gate dielectric layer disposed between the first channel and the selection word line, and a cell word line disposed on top of the first channel.