The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2024
Filed:
May. 29, 2023
Zju-hangzhou Global Scientific and Technological Innovation Center, Hangzhou, CN;
Yishu Zhang, Hangzhou, CN;
Xuemeng Fan, Hangzhou, CN;
Hua Wang, Hangzhou, CN;
Zijian Wang, Hangzhou, CN;
Abstract
Disclosed is a low-power and compact neuron circuit implementing a ReLU activation function including a first-layer synaptic array, a neuron transistor, a resistor, and a second-layer synaptic array. The neuron transistor is a MOS transistor having a threshold voltage-adjustable property, a gate electrode of the neuron transistor is connected to each voltage output end of the first-layer synaptic array, and a drain electrode of the neuron transistor is connected to each voltage input end of the second-layer synaptic array. Thus, it is possible to satisfy the decision computation and output of different synaptic array output values by adjusting the magnitude of the threshold voltage of the transistor. The neuron circuit requires only one transistor in cooperative connection with the first-layer synaptic array and the second-layer synaptic array to implement the ReLU activation function; therefore, a significant improvement is achieved in terms of energy efficiency, delay reduction, and space utilization.