The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2024

Filed:

May. 19, 2021
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventor:

Mario Motz, Wernberg, AT;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 33/07 (2006.01); G01L 1/12 (2006.01); G01R 15/20 (2006.01); G01R 19/00 (2006.01);
U.S. Cl.
CPC ...
G01L 1/12 (2013.01); G01R 15/20 (2013.01); G01R 19/0092 (2013.01);
Abstract

The subject matter described herein relates to a semiconductor circuit arrangement with a semiconductor substrate with an integrated Hall sensor circuit. During a first clock phase PHa first electrical voltage signal ±V(PH) or ±V(PH) can be generated in the Hall effect region that has a first dependency on a mechanical stress of the semiconductor substrate. During a second clock phase PHa second electrical voltage signal ±V(PH) or ±V(PH) can be generated in the Hall effect region that has a second dependency on a mechanical stress of the semiconductor substrate. The semiconductor circuit arrangement is designed to ascertain a specific mechanical stress component based on a combination of the first electrical voltage signal ±V(PH) or ±V(PH) and of the second electrical voltage signal ±V(PH) or ±V(PH).


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