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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11860032 B1

PDFFull Text
Date of Patent:
Jan. 02, 2024

Filed:

Jul. 26, 2021

Photodetector device having avalanche photodiodes two-dimensionally arranged on a compound semiconductor layer and quenching element connected in series to the photodiodes

Applicant:

Hamamatsu Photonics K.k., Hamamatsu, JP;

Inventors:

Takuya Fujita, Hamamatsu, JP;

Yusei Tamura, Hamamatsu, JP;

Kenji Makino, Hamamatsu, JP;

Takashi Baba, Hamamatsu, JP;

Koei Yamamoto, Hamamatsu, JP;

Assignee:

HAMAMATSU PHOTONICS K.K., Hamamatsu, JP;

Attorney:

Faegre Drinker Biddle & Reath LLP

Primary Examiner:

Que Tan Le

Int. Cl.
CPC ...
H01L 31/02 (2006.01); G01J 1/44 (2006.01); H01L 27/144 (2006.01); H01L 31/107 (2006.01);
U.S. Cl.
CPC ...
G01J 1/44 (2013.01); H01L 27/1446 (2013.01); H01L 31/02027 (2013.01); H01L 31/107 (2013.01); G01J 2001/442 (2013.01); G01J 2001/4466 (2013.01);
Abstract

A photodetector device includes an avalanche photodiode array substrate formed from compound semiconductor. A plurality of avalanche photodiodes arranged to operate in a Geiger mode are two-dimensionally arranged on the avalanche photodiode array substrate. A circuit substrate includes a plurality of output units which are connected to each other in parallel to form at least one channel. Each of the output units includes a passive quenching element and a capacitative element. The passive quenching element is connected in series to at least one of the plurality of avalanche photodiodes. The capacitative element is connected in series to at least one of the avalanche photodiodes and is connected in parallel to the passive quenching element.

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Fujita, Takuya. (2024). Photodetector device having avalanche photodiodes two-dimensionally arranged on a compound semiconductor layer and quenching element connected in series to the photodiodes (U.S. Patent No. 11860032). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11860032

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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