The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2024

Filed:

Mar. 05, 2019
Applicant:

Landmark Graphics Corporation, Houston, TX (US);

Inventors:

Raja Vikram R. Pandya, Katy, TX (US);

Satyam Priyadarshy, Herndon, VA (US);

Keshava Prasad Rangarajan, Sugarland, TX (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
E21B 41/00 (2006.01); G06F 30/28 (2020.01); G06F 113/08 (2020.01); G06F 111/08 (2020.01);
U.S. Cl.
CPC ...
E21B 41/00 (2013.01); G06F 30/28 (2020.01); E21B 2200/20 (2020.05); G06F 2111/08 (2020.01); G06F 2113/08 (2020.01);
Abstract

The disclosed embodiments include reservoir simulation systems and methods to dynamically improve performance of reservoir simulations. The method includes obtaining input variables for generating a reservoir simulation of a reservoir, and generating the reservoir simulation based on the input variables. The method also includes determining a variance of computation time for processing the reservoir simulation. In response to a determination that the variance of computation time is less than or equal to a threshold, the method includes performing a first sequence of Bayesian Optimizations of at least one of internal and external parameters that control the reservoir simulation to improve performance of the reservoir simulation. In response to a determination that the variance of computation time is greater than the threshold, the method includes performing a second sequence of Bayesian Optimizations of at least one of the internal and external parameters.


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