The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
Aug. 05, 2021
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Soichiro Mizusaki, Suwon-si, KR;
Doyoon Kim, Hwaseong-si, KR;
Seyun Kim, Seoul, KR;
Yumin Kim, Seoul, KR;
Jinhong Kim, Seoul, KR;
Youngjin Cho, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/20 (2023.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/24 (2023.02); H10B 63/34 (2023.02); H10B 63/845 (2023.02); H10N 70/8833 (2023.02);
Abstract
A variable resistance memory may include first and second conductive elements spaced apart from each other on a variable resistance layer. The variable resistance layer may include first to third oxide layers sequentially arranged in a direction perpendicular to a direction in which the first and second conductive elements are arranged. A dielectric constant of the second oxide layer may be greater than dielectric constants of the first and third oxide layers.