The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2023

Filed:

Mar. 17, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jaeho Jung, Seoul, KR;

Kwangmin Park, Seoul, KR;

Jonguk Kim, Yongin-si, KR;

Dongsung Choi, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H10N 70/00 (2023.01); H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/066 (2023.02); H10B 63/845 (2023.02); H10N 70/063 (2023.02); H10N 70/068 (2023.02); H10N 70/841 (2023.02); H10N 70/883 (2023.02);
Abstract

A variable resistance memory device includes first conductive lines extending in a first direction, second conductive lines extending in a second direction and crossing the first conductive lines in a plan view, and cell structures respectively provided at crossing points of the first conductive lines and the second conductive lines in the plan view. Each of the cell structures includes a switching pattern, a variable resistance pattern, and a first electrode provided between the switching pattern and the first conductive line, the first electrode including carbon. Each of the first conductive lines includes an upper pattern including a metal nitride in an upper portion thereof. The upper pattern is in contact with a bottom surface of the first electrode.


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