The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
Jun. 30, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Dong Sung Choi, Hwaseong-si, KR;
Jong Uk Kim, Yongin-si, KR;
Kwang Min Park, Seoul, KR;
Zhe Wu, Seoul, KR;
Ja Bin Lee, Hwaseong-si, KR;
Jae Ho Jung, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor memory device includes a first memory cell provided on a substrate, a second memory cell provided on the substrate and spaced apart from the first memory cell, a passivation layer extending along a side surface of the first memory cell and a side surface of the second memory cell, and a gap fill layer covering the passivation layer. Each of the first memory cell and the second memory cell includes a selection pattern having ovonic threshold switching characteristics, and a storage pattern provided on the selection pattern. The passivation layer includes a lower portion filling a space between the selection pattern of the first memory cell and the selection pattern of the second memory cell, and an upper portion extending along a side surface of the storage pattern of each of the first memory cell and the second memory cell.