The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
Feb. 16, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Yujin Seo, Daejeon, KR;
Euntaek Jung, Seongnam-si, KR;
Byoungil Lee, Hwaseong-si, KR;
Seul Lee, Seoul, KR;
Joonhee Lee, Seongnam-si, KR;
Changdae Jung, Suwon-si, KR;
Bonghyun Choi, Yongin-si, KR;
Sejie Takaki, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a pattern structure; a stack structure including gate and interlayer insulating layers on the pattern structure; and vertical structures penetrating through the stack structure, contacting the pattern structure. The pattern structure includes a lower pattern layer, an intermediate pattern layer, and an upper pattern layer sequentially stacked, the vertical structures including a vertical memory structure penetrating through the upper pattern and intermediate pattern layers and extending into the lower pattern layer, the intermediate pattern layer including a first portion, a second portion extending from the first portion and having a decreased thickness, and a third portion extending from the first portion, having an increased thickness, and contacting the vertical memory structure. The second portion of the intermediate pattern layer has a side surface that is lowered while forming a surface curved from an upper surface of the first portion and that contacts the upper pattern layer.