The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2023

Filed:

Jun. 10, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hyun-Jung Lee, Seongnam-si, KR;

Joon-Seok Moon, Seongnam-si, KR;

Dongsoo Woo, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 29/06 (2006.01); H01L 21/28 (2006.01); H01L 21/3213 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H10B 12/34 (2023.02); H01L 21/28088 (2013.01); H01L 21/32133 (2013.01); H01L 29/0649 (2013.01); H01L 29/4966 (2013.01); H10B 12/053 (2023.02); H10B 12/315 (2023.02);
Abstract

A semiconductor device, and a method of fabricating the semiconductor device including forming on a substrate a device isolation layer defining a plurality of active regions; and forming a plurality of gate lines intersecting the active regions and buried in the substrate. The forming of the gate lines includes forming on the substrate a trench that intersects the active regions; forming a work-function control layer on a sidewall and a bottom surface of the trench; forming a conductive layer on the work-function control layer; sequentially forming a barrier layer and a source layer on the work-function control layer and the conductive layer, the source layer including a work-function control element; and diffusing the work-function control element from the source layer into an upper portion of the work-function control layer.


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