The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
Jan. 07, 2020
Mitsubishi Electric Corporation, Tokyo, JP;
Shinsuke Watanabe, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
The present invention relates to a high-frequency semiconductor device. A conventional high-frequency semiconductor device including an input second-order harmonic matching circuit has such a problem that gain decrease occurs. In a high-frequency semiconductor device () of the present invention, two adjacent unit transistor cells () and () are connected to one input second-order harmonic matching circuit () provided on an upper surface of a semiconductor substrate (). The input second-order harmonic matching circuit () includes a first capacitor (), a first inductor (), a second capacitor (), and a second inductor (). The first capacitor () and the first inductor () resonate at the frequency of a fundamental wave, and each of impedances as seen by input electrodes of the two unit transistor cells () and () is short-circuited at the frequency of a second-order harmonic.