Connection structure of snubber circuit within semiconductor device and power module structure using same

Abstract

A connection structure of a snubber circuit within a semiconductor device includes: a first substrate having a first electrode wiring line; a second substrate facing the first substrate, the second substrate having a second electrode wiring line facing the first electrode wiring line; and a stack ceramic capacitor having connection terminals provided on opposite ends, respectively, of the stack ceramic capacitor installed in an upright position in such a manner that entire surfaces of the connection terminals are connected to the first and second electrode wiring lines, respectively, where the stack ceramic capacitor is installed adjacent to a switching element attached on the first substrate, and the connection terminal and one electrode terminal on the switching element are connected with the first electrode wiring line interposed therebetween.