The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
Jan. 09, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Kyung Bae Park, Hwaseong-si, KR;
Sung Jun Park, Yongin-si, KR;
Feifei Fang, Suwon-si, KR;
Sung Young Yun, Suwon-si, KR;
Seon-Jeong Lim, Yongin-si, KR;
Chul Joon Heo, Busan, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A sensor includes a first electrode and a second electrode, and a photo-active layer between the first electrode and the second electrode. The photo-active layer includes a light absorbing semiconductor configured to form a Schottky junction with the first electrode. The photo-active layer has a charge carrier trapping site configured to capture photo-generated charge carriers generated based on the light absorbing semiconductor absorbing incident light that enters at least the photo-active layer at a position adjacent to the first electrode. The sensor is configured to have an external quantum efficiency (EQE) that is adjusted based on a voltage bias being applied between the first electrode and the second electrode.