The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
Jun. 08, 2021
Joulwatt Technology Co., Ltd., Hangzhou, CN;
Guangtao Han, Hangzhou, CN;
JOULWATT TECHNOLOGY CO., LTD, Hangzhou, CN;
Abstract
Disclosed is a semiconductor structure and a manufacturing method. The semiconductor structure includes an N-type doped region in a substrate; a metal structure on a surface of the substrate and including a middle portion and an edge portion, wherein the middle portion is in contact with the N-type doped region so as to form an SBD; a first P-type well region which is located in the N-type doped region, in contact with the edge portion and separates the edge portion from the N-type doped region; a first P-type contact region located in the first P-type well region and separated from the edge portion. When the first P-type contact region is grounded, the first P-type well region receives an anode voltage of the SBD. Low voltage drop and high frequency characteristics of the SBD are maintained on a premise of improving the breakdown voltage reducing the leak current.