The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2023

Filed:

Jul. 20, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Junggun You, Ansan-si, KR;

Yoonjoong Kim, Seoul, KR;

Seungwoo Do, Yongin-si, KR;

Sungil Park, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); H01L 29/1033 (2013.01);
Abstract

A semiconductor device including a substrate that includes first to third regions; a first channel structure on the first region and including first channel patterns that are vertically stacked on the substrate; a second channel structure on the second region and including a second channel pattern on the substrate; a third channel structure on the third region and including third channel patterns and fourth channel patterns that are vertically and alternately stacked on the substrate; first to third gate electrodes on the first to third channel structures; and first to third source/drain patterns on opposite sides of the first to third channel structures, wherein the first, second, and fourth channel patterns include a first semiconductor material, and the third channel patterns include a second semiconductor material different from the first semiconductor material.


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