The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
Jul. 30, 2021
Leadtrend Technology Corporation, Zhubei, TW;
Tsung-Yi Huang, Zhubei, TW;
Deng-Sheng Huang, Zhubei, TW;
LEADTREND TECHNOLOGY CORPORATION, Zhubei, TW;
Abstract
High-voltage semiconductor devices are disclosed, each having gate, source and drain electrodes. A deep well layer is formed on a substrate and has a surface, where the substrate and the deep well layer are of first-type and second-type conductivities, respectively. A field isolation layer on the surface isolates a drain active region from a source active region. The source electrode contacts the source active region on the surface to form an ohmic contact. The drain electrode contacts the drain active region on the surface. A first well layer of the first-type conductivity is formed on the surface and between the ohmic contact and the drain active region, and at least a portion of the first well layer is under the field isolation layer. A bottom layer of the first-type conductivity is formed at a bottom of the deep well layer. The gate electrode is on the field isolation layer.