The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
Oct. 31, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Keun Hwi Cho, Seoul, KR;
Soonmoon Jung, Seongnam-si, KR;
Dongwon Kim, Seongnam-si, KR;
Myung Gil Kang, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
Semiconductor devices and methods of forming the same are disclosed. The semiconductor devices may include a substrate including a first region and a second region, which are spaced apart from each other with a device isolation layer interposed therebetween, a first gate electrode and a second gate electrode on the first and second regions, respectively, an insulating separation pattern separating the first gate electrode and the second gate electrode from each other and extending in a second direction that traverses the first direction, a connection structure electrically connecting the first gate electrode to the second gate electrode, and a first signal line electrically connected to the connection structure. The first and second gate electrodes are extended in a first direction and are aligned to each other in the first direction. The first signal line may extend in the second direction and may vertically overlap the insulating separation pattern.