The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
Sep. 30, 2020
California Institute of Technology, Pasadena, CA (US);
Craig E Ives, Pasadena, CA (US);
Seyed Mohammadreza Fatemi, Pasadena, CA (US);
Aroutin Khachaturian, Pasadena, CA (US);
Seyed Ali Hajimiri, Pasadena, CA (US);
California Institute of Technology, Pasadena, CA (US);
Abstract
A method of fabricating a photonic device includes in part, forming a multitude of metal and dielectric layers over a semiconductor substrate to form a structure. The metal layers form a continuous metal trace that characterize an etch channel. At least one of the metal layers extends towards an exterior surface of the structure such that when the structure is exposed to a metal etch, the metal etch removes the metal from the exterior surface of the structure and flows through the etch channel to fully etch the metal layers. The metal etch leaves behind a dielectric structure characterizing a photonic device. The photonic device may be a suspended rib waveguide, a suspended channel waveguide, a grating coupler, an interlayer coupler, a photodetector, a phase modulator, an edge coupler, and the like. A photonics system may include one or more of such devices.