The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2023

Filed:

Jul. 28, 2020
Applicant:

Thermo Finnigan Llc, San Jose, CA (US);

Inventors:

Oleg Silivra, Milpitas, CA (US);

Alan E. Schoen, Kilauea, HI (US);

Johnathan W. Smith, Round Rock, TX (US);

Berg A. Tehlirian, Daly City, CA (US);

Assignee:

Thermo Finnigan LLC, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 43/24 (2006.01); H01J 49/02 (2006.01);
U.S. Cl.
CPC ...
H01J 43/246 (2013.01); H01J 49/025 (2013.01);
Abstract

A metal-channel conversion dynode comprises: a wafer comprising a first face and a second face parallel to the first face and having a thickness less than 1000 μm; and a plurality of channels passing through the wafer from the first face to the second face at an angle to a plane of the first face and a plane of the second face. In some embodiments, each inter-channel distance may be substantially the same as the wafer thickness. In some embodiments, the wafer is fabricated from tungsten. In some other embodiments, the wafer comprises a non-electrically conductive material that is fabricated by three-dimensional (3D) printing or other means and that is coated, on its faces and within its channels, with a metal or suitably conductive coating that produces secondary electrons upon impact by either positive or negative ions.


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