The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
Jun. 15, 2021
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Do Hyun Kim, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01); G11C 16/10 (2006.01); G11C 16/04 (2006.01); G11C 16/26 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0659 (2013.01); G06F 3/064 (2013.01); G06F 3/0619 (2013.01); G06F 3/0634 (2013.01); G06F 3/0679 (2013.01); G11C 11/5628 (2013.01); G11C 11/5642 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01);
Abstract
A nonvolatile memory device comprising: a first block comprising multiple single level cells (SLCs), a second block comprising multiple multi-level cells (MLCs), and an operation controller is suitable to perform, in response to a read command applied from an outside: a read operation using an SLC method on first data stored in the first block or a read operation using an MLC method on second data stored in the second block in a normal mode, and a read operation using the MLC method on the first data or a read operation using the SLC method on the second data in a protection mode.