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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11852800 B1

PDFFull Text
Date of Patent:
Dec. 26, 2023

Filed:

Nov. 15, 2022

Backside etch process for transparent silicon oxide technology

Applicant:

L3harris Technologies, Inc., Melbourne, FL (US);

Inventors:

Jacob Becker, Gilbert, AZ (US);

Jon Burnsed, Tempe, AZ (US);

Assignee:

L3HARRIS TECHNOLOGIES, INC., Melbourne, FL (US);

Attorney:

Workman Nydegger

Primary Examiner:

Muhammad N Edun

Int. Cl.
CPC ...
G02B 23/12 (2006.01); G02B 27/01 (2006.01); H10K 59/32 (2023.01); H10K 71/00 (2023.01); H10K 71/20 (2023.01); H10K 102/00 (2023.01);
U.S. Cl.
CPC ...
G02B 23/125 (2013.01); G02B 27/0172 (2013.01); H10K 59/32 (2023.02); H10K 71/00 (2023.02); H10K 71/231 (2023.02); G02B 2027/0132 (2013.01); H10K 2102/00 (2023.02);
Abstract

Increasing transparency of one or more micro-displays. A method includes attaching a transparent cover to at least a portion of a semiconductor wafer. The at least a portion of the semiconductor wafer includes the one or more micro-displays. The one or more micro-displays include one or more active silicon areas. The method further includes, after the transparent cover has been attached to the at least a portion of the semiconductor wafer, removing silicon between one or more of the active silicon areas, causing the one or more micro-displays to have a transparency of at least 50%.

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