The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2023

Filed:

Oct. 14, 2019
Applicant:

Fujian Beidian Material Technologies Co., Ltd., Fujian, CN;

Inventors:

Huarong Chen, Fujian, CN;

Jie Zhang, Fujian, CN;

Hongji Liao, Fujian, CN;

Zebin Chen, Fujian, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 23/06 (2006.01); C30B 23/00 (2006.01); C30B 29/36 (2006.01);
U.S. Cl.
CPC ...
C30B 23/005 (2013.01); C30B 23/066 (2013.01); C30B 29/36 (2013.01);
Abstract

A high-purity semi-insulating silicon carbide crystal growing apparatus and a method therefor are provided, the apparatus comprising a growth crucible, a bottom part of the growth crucible having inserted a gas pipe, a top part of the growth crucible being provided with a growth crucible cover, a feedstock crucible having a bowl-shaped structure being disposed in the growth crucible, an upper part of the feedstock crucible being provided with a baffle, a bottom part of the feedstock crucible being provided with a ring-shaped supporting feedstock crucible bottom foot, the diameter of the feedstock crucible bottom foot being ⅛ the diameter of the feedstock crucible, and the feedstock crucible bottom foot having disposed thereon 8-36 evenly distributed gas holes.


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