The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2023

Filed:

Jun. 10, 2021
Applicant:

Guangdong Kaijin New Energy Technology Co., Ltd., Dongguan, CN;

Inventors:

Luo Yan, Guangdong, CN;

Anhua Zheng, Guangdong, CN;

Yongjun Yang, Guangdong, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 32/194 (2017.01); C01B 33/021 (2006.01); C23C 16/22 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); C23C 16/56 (2006.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
C01B 32/194 (2017.08); C01B 33/021 (2013.01); C23C 16/22 (2013.01); C23C 16/45553 (2013.01); C23C 16/52 (2013.01); C23C 16/56 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C01P 2004/61 (2013.01); C01P 2006/10 (2013.01); C01P 2006/12 (2013.01); C01P 2006/40 (2013.01);
Abstract

A silicon-carbon composite material includes a matrix core, a silicon-carbon composite shell formed by uniformly dispersing nano silicon particles in conductive carbon, and a coating layer. The nano silicon particles are formed by high-temperature pyrolysis of a silicon source, and the conductive carbon is formed by high-temperature pyrolysis of an organic carbon source. The coating layer is a carbon coating layer including at least one layer, and the thickness of its single layer is 0.2-3 μm. A silicon-carbon composite material precursor is formed by simultaneous vapor deposition and is then subjected to carbon coating to form the pitaya-like silicon-carbon composite material which has advantages of high first-cycle efficiency, low expansion and long cycle. The grain growth of the silicon material is slowed down during the heat treatment process, the pulverization of the material is effectively avoided, and the cycle performance, conductivity and rate performance of the material are enhanced.


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