The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
Jun. 21, 2019
The Regents of the University of Michigan, Ann Arbor, MI (US);
Khalil Najafi, Ann Arbor, MI (US);
Seyed Amin Sandoughsaz Zardini, Ann Arbor, MI (US);
Daniel Egert, San Francisco, CA (US);
The Regents of the University of Michigan, Ann Arbor, MI (US);
Abstract
Various methods of manufacture can produce three-dimensional, high density, high-electrode probe arrays that can advantageously be used in neural-based applications. In one example, deep reactive ion etched (DRIE) ultra-high aspect ratio holes are etched in silicon and refilled with multiple films to a high density array of individual probes, each probe having individual recording and/or stimulation sites or tips. Using a DRIE lag effect technique can help control tip sharpness and electrode length, allowing for narrow, long, and dense needles to be formed side-by-side in a single array. In some examples, multimodal probe arrays are manufactured, with some probes having a recording/stimulating site, other probes having a waveguide, and yet other probes having a microfluidic channel.