The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 19, 2023

Filed:

Oct. 26, 2022
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Kshitij Yadav, San Diego, CA (US);

Vijayakumar Dhanasekaran, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 1/40 (2015.01); H03F 3/185 (2006.01); H03F 3/193 (2006.01);
U.S. Cl.
CPC ...
H04B 1/40 (2013.01); H03F 3/185 (2013.01); H03F 3/193 (2013.01); H03F 2200/03 (2013.01); H03F 2200/451 (2013.01);
Abstract

An aspect includes an apparatus including a first amplifier; a first field effect transistor (FET) including a first source coupled to an output of the first amplifier, and a first drain for coupling to a first load; and a first gate drive circuit including an input coupled to the output of the first amplifier and an output coupled to a first gate of the first FET. Another aspect includes a method including amplifying a first audio signal using a first audio amplifier to generate a first voltage; generating a first gate voltage based on the first voltage; applying the first gate voltage to a first gate of a first field effect transistor (FET) coupled between the first audio amplifier and a first audio transducer; and applying the first voltage to a first source of the first FET.


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