The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 19, 2023

Filed:

Sep. 11, 2020
Applicant:

Raytheon Company, Tewksbury, MA (US);

Inventors:

Jason C. Soric, North Andover, MA (US);

Jeffrey R. Laroche, Andover, MA (US);

Eduardo M. Chumbes, Andover, MA (US);

Adam E. Peczalski, Everett, MA (US);

Assignee:

Raytheon Company, Tewksbury, MA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03H 9/54 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H03F 3/195 (2006.01); H03H 3/02 (2006.01); H03H 9/56 (2006.01); H04B 1/10 (2006.01); H10N 39/00 (2023.01); H04B 1/06 (2006.01);
U.S. Cl.
CPC ...
H03H 9/545 (2013.01); H01L 21/0254 (2013.01); H01L 21/02378 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H03F 3/195 (2013.01); H03H 3/02 (2013.01); H03H 9/562 (2013.01); H03H 9/568 (2013.01); H04B 1/10 (2013.01); H10N 39/00 (2023.02); H03F 2200/294 (2013.01); H03F 2200/451 (2013.01); H04B 1/06 (2013.01);
Abstract

Embodiments of a single-chip ScAIN tunable filter bank include a plurality of switching elements, and a plurality of channel filters integrated on a monolithic platform. The monolithic platform may comprise a single crystal base and each of the switching elements may comprise at least one of a scandium aluminum nitride (ScAIN) or other Group III-Nitride transistor structure fabricated on the single crystal base. In these embodiments, each channel filter comprises a multi-layered ScAIN structure comprising one or more a single-crystal epitaxial ScAIN layers fabricated on the single crystal base. The ScAIN layers for each channel filter may be based on desired frequency characteristics of an associated one of the RF channels.


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