The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 19, 2023

Filed:

Jan. 13, 2022
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Shesh Mani Pandey, Saratoga Springs, NY (US);

Jagar Singh, Clifton Park, NY (US);

Judson Holt, Ballston Lake, NY (US);

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/737 (2006.01); H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/737 (2013.01); H01L 21/76289 (2013.01); H01L 29/0649 (2013.01); H01L 29/66242 (2013.01);
Abstract

Structures for a bipolar junction transistor and methods of forming a structure for a bipolar junction transistor. The structure includes a dielectric layer having a cavity, a first semiconductor layer on the dielectric layer, a collector including a portion on the first semiconductor layer, an emitter including a portion on the first semiconductor layer, and a second semiconductor layer that includes a first section in the cavity and a second section. The second section of the second semiconductor layer is laterally positioned between the portion of the collector and the portion of the emitter.


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