The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 19, 2023

Filed:

Jul. 11, 2019
Applicant:

Hitachi Automotive Systems, Ltd., Hitachinaka, JP;

Inventors:

Hironori Nagasaki, Tokyo, JP;

Shintaro Tanaka, Tokyo, JP;

Takashi Hirao, Tokyo, JP;

Assignee:

Hitachi Astemo, Ltd., Hitachinaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/492 (2006.01); H01L 23/495 (2006.01); H01L 23/00 (2006.01); H01L 25/18 (2023.01); H02M 7/00 (2006.01); H01L 23/367 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3121 (2013.01); H01L 23/4924 (2013.01); H01L 23/49541 (2013.01); H01L 24/32 (2013.01); H01L 25/18 (2013.01); H02M 7/003 (2013.01); H01L 23/367 (2013.01);
Abstract

A power semiconductor apparatus includes a power semiconductor element having low and high potential side electrodes and a sense electrode, high and low potential side conductors electrically connected with the high potential side electrodes, respectively, a sense wiring electrically connected with the sense electrode, and a first metal portion facing the low potential side conductor or the low potential side conductor across the sense wiring. When viewed from an array direction of the sense wiring and the first metal portion, the sense wiring has a facing portion facing the high or low potential side conductor, the first metal portion forms a recess in a part overlapping the facing portion, and a depth of the recess is formed such that a distance between a bottom of the recess and the sense wiring is larger than a distance between the sense wiring and the high or low potential side conductor.


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