The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2023
Filed:
Feb. 21, 2023
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Tatsuo Shimizu, Shinagawa, JP;
Yukio Nakabayashi, Yokohama, JP;
Johji Nishio, Machida, JP;
Chiharu Ota, Kawasaki, JP;
Toshihide Ito, Shibuya, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
A semiconductor device according to an embodiment includes: a silicon carbide layer; a silicon oxide layer; and a region disposed between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration equal to or more than 1×10cm. A nitrogen concentration distribution in the silicon carbide layer, the silicon oxide layer, and the region have a peak in the region, a nitrogen concentration at a first position 1 nm away from the peak to the side of the silicon oxide layer is equal to or less than 1×10cmand a carbon concentration at the first position is equal to or less than 1×10cm, and a nitrogen concentration at a second position 1 nm away from the peak to the side of the silicon carbide layer is equal to or less than 1×10cm.