The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 19, 2023

Filed:

Aug. 23, 2022
Applicant:

Paragraf Ltd., Somersham, GB;

Inventor:

Simon Charles Stewart Thomas, Peterborough, GB;

Assignee:

Paragraf Ltd., Somersham, GB;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/16 (2006.01); H01L 21/02 (2006.01); C30B 25/10 (2006.01); C30B 29/02 (2006.01); C30B 29/06 (2006.01); C30B 29/60 (2006.01); C23C 16/26 (2006.01); C23C 16/24 (2006.01); C01B 32/186 (2017.01); C23C 16/455 (2006.01); C30B 25/14 (2006.01); C30B 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0262 (2013.01); C01B 32/186 (2017.08); C23C 16/24 (2013.01); C23C 16/26 (2013.01); C23C 16/45572 (2013.01); C30B 25/10 (2013.01); C30B 25/14 (2013.01); C30B 25/16 (2013.01); C30B 29/02 (2013.01); C30B 29/06 (2013.01); C30B 29/403 (2013.01); C30B 29/406 (2013.01); C30B 29/60 (2013.01); H01L 21/0254 (2013.01); H01L 21/0257 (2013.01); H01L 21/02521 (2013.01); H01L 21/02527 (2013.01); H01L 21/02532 (2013.01); H01L 21/0242 (2013.01); H01L 21/02378 (2013.01); H01L 21/02381 (2013.01); H01L 21/02389 (2013.01); H01L 21/02392 (2013.01); H01L 21/02395 (2013.01); H01L 21/02398 (2013.01); H01L 21/02403 (2013.01); H01L 21/02422 (2013.01);
Abstract

A method of producing graphene or other two-dimensional material such as graphene including heating the substrate held within a reaction chamber to a temperature that is within a decomposition range of a precursor, and that allows two-dimensional crystalline material formation from a species released from the decomposed precursor; establishing a steep temperature gradient (preferably >1000° C. per meter) that extends away from the substrate surface towards an inlet for the precursor; and introducing precursor through the relatively cool inlet and across the temperature gradient towards the substrate surface. The steep temperature gradient ensures that the precursor remains substantially cool until it is proximate the substrate surface thus minimizing decomposition or other reaction of the precursor before it is proximate the substrate surface. The separation between the precursor inlet and the substrate is less than 100 mm.


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Thomas, Simon Charles Stewart. (2023). Method of producing a two-dimensional material (U.S. Patent No. 11848206). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11848206

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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