The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 19, 2023

Filed:

Nov. 03, 2022
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Huan-Yu Lai, Hsinchu, TW;

Li-Chi Peng, Hsinchu, TW;

Assignee:

EPISTAR CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/14 (2010.01); H01L 33/32 (2010.01); H01L 33/06 (2010.01); H01L 33/30 (2010.01); H01L 33/00 (2010.01); H01L 33/04 (2010.01);
U.S. Cl.
CPC ...
H01L 33/145 (2013.01); H01L 33/0062 (2013.01); H01L 33/04 (2013.01); H01L 33/06 (2013.01); H01L 33/14 (2013.01); H01L 33/30 (2013.01); H01L 33/305 (2013.01); H01L 33/32 (2013.01); H01L 33/325 (2013.01);
Abstract

A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure between the active region and the second semiconductor layer; a first nitride semiconductor layer between the active region and the electron blocking structure, and including indium and aluminum elements; and a second nitride semiconductor layer between the electron blocking structure and the second semiconductor layer, including indium element and devoid of gallium element; wherein the first nitride semiconductor layer has a first indium content, the second nitride semiconductor layer has a second indium content, and the first indium content is greater than the second indium content.


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