The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 19, 2023

Filed:

May. 13, 2021
Applicant:

Meta Platforms Technologies, Llc, Menlo Park, CA (US);

Inventors:

Alexander Tonkikh, Cork, IE;

Guillaume Lheureux, Cork, IE;

Markus Broell, Cork, IE;

Berthold Hahn, Cork, IE;

Assignee:

META PLATFORMS TECHNOLOGIES, LLC, Menlo Park, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/30 (2010.01); H01L 33/00 (2010.01); H01L 33/38 (2010.01); H01L 33/06 (2010.01); H01L 33/08 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 33/0062 (2013.01); H01L 33/08 (2013.01); H01L 33/30 (2013.01); H01L 33/38 (2013.01); H01L 2933/0016 (2013.01);
Abstract

A lateral micro-light emitting diode includes a first semiconductor layer, an active region on the first semiconductor layer and including one or more quantum well layers configured to emit light, a p-type semiconductor region on a first lateral region (e.g., a central region) of the active region, and an n-type semiconductor region on a second lateral region (e.g., peripheral regions) of the active region, where the n-type semiconductor region and the p-type semiconductor region are on a same side of the active region.


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