The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 19, 2023

Filed:

Apr. 01, 2020
Applicant:

Meridian Innovation Pte Ltd, Singapore, SG;

Inventors:

Wan Chia Ang, Singapore, SG;

Piotr Kropelnicki, Singapore, SG;

Ilker Ender Ocak, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00238 (2013.01); B81B 2201/0207 (2013.01); B81B 2207/012 (2013.01); B81C 2201/0194 (2013.01); B81C 2203/0714 (2013.01); B81C 2203/0721 (2013.01); B81C 2203/0735 (2013.01); B81C 2203/0771 (2013.01); B81C 2203/0792 (2013.01);
Abstract

A complementary metal oxide semiconductor (CMOS) device integrated with micro-electro-mechanical system (MEMS) components in a MEMS region is disclosed. The MEMS components, for example, are infrared (IR) thermosensors. The MEMS sensors are integrated on the CMOS device heterogeneously. For example, a CMOS wafer with CMOS devices and interconnections as well as partially processed MEMS modules is bonded with a MEMS wafer with MEMS structures, post CMOS compatibility issues are alleviated. Post integration process to complete the devices includes forming contacts for interconnecting the sensors to the CMOS components as well as encapsulating the devices with a cap wafer using wafer-level vacuum packaging.


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