The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2023

Filed:

Aug. 03, 2021
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Mineo Shimotsusa, Machida, JP;

Fumihiro Inui, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 25/75 (2023.01);
U.S. Cl.
CPC ...
H04N 25/75 (2023.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14601 (2013.01); H01L 27/14609 (2013.01); H01L 27/14612 (2013.01); H01L 27/14621 (2013.01); H01L 27/14623 (2013.01); H01L 27/14627 (2013.01); H01L 27/14632 (2013.01); H01L 27/14634 (2013.01); H01L 27/14636 (2013.01); H01L 27/14641 (2013.01); H01L 27/14643 (2013.01); H01L 27/14683 (2013.01);
Abstract

A solid-state imaging device includes a first and second pixel regions. In the first pixel region, a photoelectric conversion unit, a floating diffusion region (FD), and a transferring transistor are provided. In the second pixel region, an amplifying transistor, and a resetting transistor are provided. A first element isolation portion is provided in the first pixel region, while a second element isolation portion is provided in the second pixel region. An amount of protrusion of an insulating film into a semiconductor substrate in the first element isolation portion is smaller, than that in the second element isolation portion.


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