The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2023

Filed:

Nov. 13, 2008
Applicants:

Hwa Nyeon Kim, Seoul, KR;

Ju Hwan Yun, Seoul, KR;

Jong Hwan Kim, Seoul, KR;

Bum Sung Kim, Seoul, KR;

IL Hyoung Jung, Seoul, KR;

Jin Ah Kim, Seoul, KR;

Inventors:

Hwa Nyeon Kim, Seoul, KR;

Ju Hwan Yun, Seoul, KR;

Jong Hwan Kim, Seoul, KR;

Bum Sung Kim, Seoul, KR;

Il Hyoung Jung, Seoul, KR;

Jin Ah Kim, Seoul, KR;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 31/18 (2006.01); H01L 31/0216 (2014.01); H01L 31/068 (2012.01); H01L 31/0236 (2006.01);
U.S. Cl.
CPC ...
H01L 31/022441 (2013.01); H01L 31/0236 (2013.01); H01L 31/02168 (2013.01); H01L 31/02363 (2013.01); H01L 31/02366 (2013.01); H01L 31/0682 (2013.01); H01L 31/18 (2013.01); H01L 31/1804 (2013.01); Y02E 10/547 (2013.01); Y02P 70/50 (2015.11);
Abstract

The present invention discloses a back contact solar cell comprising: a first conductive type semiconductor substrate having a front surface and a rear surface of a texturing structure; an oxide layer formed on the front surface of the substrate; at least one first conductive type semiconductor region and second conductive type semiconductor region alternatively formed at predetermined intervals on the rear surface of the substrate; an oxide layer formed on the remaining rear surface of the substrate except for the first conductive type semiconductor region and the second conductive type semiconductor region; and electrodes formed on each of the first conductive type semiconductor region and the second conductive type semiconductor region.


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