The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2023
Filed:
Jul. 23, 2021
University-industry Cooperation Group of Kyung Hee University, Yongin-si, KR;
Jin Jang, Seoul, KR;
Tae Hun Kim, Seoul, KR;
UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY, Yongin-si, KR;
Abstract
The present invention disclosures an oxide semiconductor transistor and a method of fabricating the same. The oxide semiconductor transistor according to an embodiment of the present invention includes a first gate electrode formed on a substrate; a first gate insulating film formed using a solution process on the first gate electrode; a source electrode and a drain electrode separately formed on one surface of the first gate insulating film; an oxide semiconductor film formed using a solution process on the first gate insulating film and the source and drain electrodes; a second gate insulating film formed using a solution process on the oxide semiconductor film; pixel electrodes separately formed on one surface of the second gate insulating film and electrically connected to the source and drain electrodes, respectively; and a second gate electrode formed on the second gate insulating film. According to the present invention, the first and second gate insulating films and the oxide semiconductor film are formed using a solution process, and an offset present between the source electrode and the second gate electrode and an offset present between the drain electrode and the second gate electrode are each adjusted to be 1 μm or more to reduce drain current, thereby stabilizing the electrical properties of the oxide semiconductor transistor.