The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2023
Filed:
Mar. 05, 2021
Applicant:
Meta Platforms Technologies, Llc, Menlo Park, CA (US);
Inventor:
Rajendra D. Pendse, Fremont, CA (US);
Assignee:
Meta Platforms Technologies, LLC, Menlo Park, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/16 (2023.01); H01L 33/00 (2010.01); G06F 1/16 (2006.01); H01L 21/683 (2006.01); H01L 25/075 (2006.01); H01L 33/52 (2010.01); H01L 33/62 (2010.01); G02B 27/01 (2006.01);
U.S. Cl.
CPC ...
H01L 25/167 (2013.01); G06F 1/163 (2013.01); H01L 21/6835 (2013.01); H01L 25/0753 (2013.01); H01L 33/0062 (2013.01); H01L 33/0095 (2013.01); H01L 33/52 (2013.01); H01L 33/62 (2013.01); G02B 27/0172 (2013.01); H01L 2221/68354 (2013.01); H01L 2221/68368 (2013.01); H01L 2933/005 (2013.01); H01L 2933/0066 (2013.01);
Abstract
In some examples, an article comprises a semiconductor including at least one integrated circuit and an inorganic semiconductor layer bonded to a first surface of the semiconductor. The inorganic semiconductor layer comprises a μLED array, and the first surface of the semiconductor extends beyond a first edge of the inorganic semiconductor layer. The first edge of the inorganic semiconductor layer is oriented substantially perpendicular to the first surface of the semiconductor.