The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2023

Filed:

Oct. 09, 2019
Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventors:

Atsushi Yamaguchi, Kyoto, JP;

Hiroyuki Sakairi, Kyoto, JP;

Takukazu Otsuka, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 25/16 (2023.01);
U.S. Cl.
CPC ...
H01L 23/49524 (2013.01); H01L 23/49562 (2013.01); H01L 23/49575 (2013.01); H01L 23/49589 (2013.01); H01L 25/16 (2013.01); H01L 23/49513 (2013.01);
Abstract

Semiconductor device Aincludes: first terminalA and second terminalB; first switching elementA including first gate electrodeA, first source electrodeA and first drain electrodeA; and second switching elementB including second gate electrodeB, second source electrodeB and second drain electrodeB. First switching elementA and second switching elementB are connected in series to each other between first terminalA and second terminalB. Semiconductor device Aincludes first capacitorA connected in parallel to first switching elementA and second switching elementB between first terminalA and second terminalB. First switching elementA and second switching elementB are aligned in y direction. First capacitorA overlaps with at least one of first switching elementA and second switching elementB as viewed in z direction. These arrangements serve to suppress surge voltage.


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