The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2023
Filed:
Nov. 30, 2021
Infineon Technologies Ag, Neubiberg, DE;
Jens Peter Konrath, Villach, AT;
Wolfgang Bergner, Klagenfurt, AT;
Romain Esteve, Munich, DE;
Richard Gaisberger, Velden, AT;
Florian Grasse, Hohenthurn, AT;
Jochen Hilsenbeck, Villach, AT;
Ravi Keshav Joshi, Klagenfurt, AT;
Stefan Kramp, Villach, AT;
Stefan Krivec, Arnoldstein, AT;
Grzegorz Lupina, Villach, AT;
Hiroshi Narahashi, Villach, AT;
Andreas Voerckel, Finkenstein, AT;
Stefan Woehlert, Villach, AT;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor device includes a contact metallization layer that includes aluminum and is arranged on a semiconductor substrate, an inorganic passivation structure arranged on the semiconductor substrate, an organic passivation layer comprising a first part that is arranged on the contact metallization layer, and a second part that is arranged on the inorganic passivation structure, a first layer structure including a first part that is in contact with the contact metallization layer, a second part that is contact with the inorganic passivation structure, and a third part that is disposed on the semiconductor substrate laterally between the inorganic passivation structure and the organic passivation layer.