The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2023

Filed:

Nov. 12, 2021
Applicant:

Clemson University, Clemson, SC (US);

Inventors:

Srikanth Pilla, Clemson, SC (US);

Morteza Sabet, Clemson, SC (US);

Apparao M. Rao, Clemson, SC (US);

Nancy Chen, Clemson, SC (US);

Assignee:

CLEMSON UNIVERSITY, Clemson, SC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 33/20 (2006.01); C01B 33/149 (2006.01); H01M 4/86 (2006.01); H01M 4/38 (2006.01); B82Y 30/00 (2011.01);
U.S. Cl.
CPC ...
C01B 33/149 (2013.01); C01B 33/20 (2013.01); H01M 4/386 (2013.01); H01M 4/8626 (2013.01); B82Y 30/00 (2013.01); C01P 2004/45 (2013.01); C01P 2006/12 (2013.01); C01P 2006/14 (2013.01);
Abstract

Methods for synthesis of high surface area porous silicon-based materials and structures that can be formed according to the methods are described. Methods are scalable and capable of producing large quantities of the high surface area materials with high efficiency. The high surface area products can be in the form of a 3D network of interconnected arms or quills with multimodal porosity including high level pores between and among arms, hollow cores of the arms of the network, and pores through the walls of the arms of the network.


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