The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2023

Filed:

Dec. 03, 2019
Applicant:

Nederlandse Organisatie Voor Toegepast-natuurwetenschappelijk Onderzoek Tno, The Hague, NL;

Inventor:

Gari Arutinov, Helmond, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B41J 2/44 (2006.01); H05K 3/12 (2006.01); B41J 2/005 (2006.01);
U.S. Cl.
CPC ...
B41J 2/442 (2013.01); B41J 2/005 (2013.01); H05K 3/12 (2013.01); H05K 3/1241 (2013.01); B41J 2202/04 (2013.01); H05K 2203/0528 (2013.01); H05K 2203/107 (2013.01);
Abstract

In a method and system for laser induced forward transfer (LIFT), energy (E,E) is deposited according to a non-Gaussian intensity profile (Ixy) which is spatially tuned across an interface () of the donor material () to cause the donor material () to be ejected from the donor substrate as an extended jet (Je) momentarily bridging the transfer distance (Zt) between the donor substrate () and the acceptor substrate () during a transfer period (Tt). A locally increased intensity spike (Is) at a center of the intensity profile (Ixy) causes a relatively thick jet (J) of donor material to branch into a relatively thin jet (J) at a branching position (J) between the donor substrate () and acceptor substrate (). The thick jet (J) allows a relatively large transfer (Zt) distance while the thin jet (J) deposits a relatively small droplet (Jd) of donor material ().


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